Different techniques such as Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Deposition (MOCVD) have developed this type of structure. The heterostructures of In xAl 1−xAs/InP have a type II transition which becomes a promising contender for the optical telecommunication light source. These advancement efforts were appointed by the fabrication and commercialization of a variety of devices such as Quantum cascade lasers (QCLs), Avalanche Photodiodes (APDs) and high-electron-mobility transistor (HEMT). InAlAs-InP materials have attracted tremendous interest over the past decades due to a variety of potential applications such as optical, optoelectronic and electronic devices due to its large direct band-gap energy, high electron mobility and the type II nature of the interface. It is expected that these factors will be heavily dependent on growth conditions such as substrate orientation, V/III ratio. The primary reasons for this are: (i) the presence of a built-in electric field, produced through the piezoelectric effect in the layer and (ii) the difference in arsenic segregation at the inverse interface. Indeed, in (311) plane, the strain and hydrostatic deformations are discovered to be improved compared to those on (100) plane. In addition, InAlAs semiconductor layers grown on (311) A/B-oriented InP substrates give several unique characteristics compared to those grown on InP (100). For example, (311) A and (311) B are not acquired as compared to the used (001) surface due to their remarkable characteristics. Recently, scientists have focused their interest in InAlAs/InP grown on non-conventional (n11) planes. Indicating the existence of localized carriers, they were ascribed to the energy potential modulation associated with the indium cluster formation and PZ field. PL peak energy, PL intensity, and half maximum full width show anomalous behaviors. PL-luminescence measurements were performed out as a function of temperature. The analysis of their period has allowed one to assess the value of the PZ field in the samples. PR signals corresponding to Franz-Keldysh Oscillation (FKO) were observed. In fact, we have noted an opposite behavior of type II energy transition shift from A to B polarity substrate in respect to V/III ratio variation. However, the recombination of the type II interface showed a powerful dependence on AsH3 overpressure and substrate polarity. It is a fingerprint of type II transition emission. It is discovered that the PL line was shifted to a greater energy side with the increasing excitation power density, and no saturation was observed of its related PL intensity. Measurements of photoluminescence (PL) and photoreflectance (PR) were performed to study the impact of the V/III flux ratio. InAlAs alloy was grown by MOCVD on an InP (311) substrate with different polarities.
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